MDI200-12A4
RoHS 
RoHS compliant
RoHS compliantPackage Y3-DCB
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 270A 7-Pin Y3-DCB
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Technical Details
Supply Chain
Factory Lead Time 32 Weeks
Physical
Mount Chassis Mount, Panel, Screw
Mounting Type Chassis Mount
Package / Case Y3-DCB
Number of Pins 7
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Box
Published 2000
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.13kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MDD200
Pin Count 7
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Turn On Delay Time 100 ns
Power - Max 1130W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 650 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 270A
Current - Collector Cutoff (Max) 10mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 11nF
Turn On Time 150 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 150A
Turn Off Time-Nom (toff) 700 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 11nF @ 25V
VCEsat-Max 3 V
Dimensions
Height 30mm
Length 110mm
Width 62mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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