Gate-Emitter Thr Voltage-Max 5V
Input Capacitance (Cies) @ Vce 4060pF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 295 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 82A
Collector Emitter Saturation Voltage 2.75V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 50μA
Max Collector Current 105A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 192 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 500W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ