Input Capacitance (Cies) @ Vce 9.97nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 395 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 100A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 50μA
Max Collector Current 280A
Collector Emitter Voltage (VCEO) 1.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 940W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ