Gate-Emitter Thr Voltage-Max 8V
Input Capacitance (Cies) @ Vce 8nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 1500 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 55A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 110A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 500W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ