Input Capacitance (Cies) @ Vce 4.75nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 210 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 650μA
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Base Part Number IXG*60N60
Terminal Form UNSPECIFIED
Max Power Dissipation 480W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS, UL RECOGNIZED
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ