Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Form UNSPECIFIED
Base Part Number IXG*60N60
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Current - Collector Cutoff (Max) 200μA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 60A
Turn Off Time-Nom (toff) 650 ns
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4nF @ 25V
Gate-Emitter Thr Voltage-Max 5V