Input Capacitance (Cies) @ Vce 32nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 840 ns
Vce(on) (Max) @ Vge, Ic 1.25V @ 15V, 100A
Collector Emitter Saturation Voltage 1.25V
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 400A
Collector Emitter Voltage (VCEO) 1.25V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 830W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED, LOW CONDUCTION LOSS
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ