Input Capacitance (Cies) @ Vce 26nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 730 ns
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 100A
Collector Emitter Saturation Voltage 1.35V
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 50μA
Max Collector Current 300A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 310 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Base Part Number IXG*200N60
Terminal Form UNSPECIFIED
Max Power Dissipation 830W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED, LOW CONDUCTION LOSS
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ