Input Capacitance (Cies) @ Vce 14.8nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 830 ns
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 100A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 650μA
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 1.35V
Turn-Off Delay Time 410 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Base Part Number IXG*120N60
Terminal Form UNSPECIFIED
Max Power Dissipation 595W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS, UL RECOGNIZED
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ