Gate-Emitter Thr Voltage-Max 5V
Input Capacitance (Cies) @ Vce 4.5nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 900 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 40A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 200μA
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Base Part Number IXG*40N60
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~150°C TJ