Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 416W
Terminal Form UNSPECIFIED
Base Part Number IXG*200N60
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 160A
Current - Collector Cutoff (Max) 200μA
Collector Emitter Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 120A
Turn Off Time-Nom (toff) 540 ns
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 11nF @ 25V