Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 445W
Terminal Form UNSPECIFIED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 680 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Current - Collector Cutoff (Max) 800μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 60A
Turn Off Time-Nom (toff) 710 ns
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.8nF @ 25V
Gate-Emitter Thr Voltage-Max 6.5V