Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel (Ni)
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 625W
Terminal Form UNSPECIFIED
Base Part Number IXB*75N170
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 145A
Current - Collector Cutoff (Max) 25μA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A
Turn Off Time-Nom (toff) 840 ns
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.93nF @ 25V
Gate-Emitter Thr Voltage-Max 5.5V