IXA60IF1200NA
RoHS 
RoHS compliant
RoHS compliantPackage SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IXYS SEMICONDUCTOR IXA60IF1200NA IGBT Single Transistor, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 Pins
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Buying Options
Total Price: USD $40.27
Unit Price: USD $40.2724
≥1 USD $40.2724
≥10 USD $33.04385
≥100 USD $32.0112
≥500 USD $30.97855
≥1000 USD $29.9459
≥3000 USD $26.84795
Inventory: 1503
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Chassis, Screw, Stud, Surface Mount
Mounting Type Chassis, Stud Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish NICKEL
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 290W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration Single
Power Dissipation 290W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 88A
Reverse Recovery Time 350 ns
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Dimensions
Height 9.6mm
Length 38.23mm
Width 25.25mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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