IXA27IF1200HJ
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IXYS SEMICONDUCTOR IXA27IF1200HJ IGBT Single Transistor, 43 A, 2.1 V, 150 W, 1.2 kV, TO-247AD, 3 Pins
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Buying Options
Total Price: USD $9.57
Unit Price: USD $9.5656
≥1 USD $9.5656
≥10 USD $7.74283
≥100 USD $7.28728
≥500 USD $6.604127
≥1000 USD $6.057577
Inventory: 1513
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Published 2013
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Pin Count 3
Number of Elements 1
Configuration Single
Power Dissipation 150W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 43A
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Dimensions
Height 21.34mm
Length 16.13mm
Width 5.21mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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