IFS100B12N3E4_B39
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 100A 515W
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Technical Details
Technical
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Power Dissipation-Max (Abs) 515W
Turn On Time 210 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.3nF @ 25V
VCEsat-Max 2.1 V
Current - Collector Cutoff (Max) 1mA
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 515W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X34
Pin Count 34
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
ECCN Code EAR99
Number of Terminations 34
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
Published 2009
Operating Temperature 175°C TJ
Compliance
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Alternative Model
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