IFF300B12N2E4PB11BPSA1
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 600A 20MW
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 18.5nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 540 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 300A
Turn On Time 310 ns
Current - Collector (Ic) (Max) 600A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 1mA
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 20mW
Case Connection ISOLATED
Configuration Half Bridge
Number of Elements 2
JESD-30 Code R-XUFM-X28
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL RECOGNIZED
ECCN Code EAR99
Number of Terminations 28
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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