FT150R12KE3G_B4
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 200A 39-Pin ECONO 3
PDF
/
Inventory: 8662
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
VCEsat-Max 2.15 V
Input Capacitance (Cies) @ Vce 10.5nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 850 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A
Turn On Time 350 ns
Power Dissipation-Max (Abs) 700W
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 700W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 3
Pin Count 39
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 39
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 39
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Alternative Model
Recommended For You
FT150R12KE3G_B4+price,FT150R12KE3G_B4+datasheet,FT150R12KE3G_B4+in stock,buy+FT150R12KE3G_B4,finder+FT150R12KE3G_B4,FT150R12KE3G_B4+tutorials,FT150R12KE3G_B4+download