FS75R12KE3_B3
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 100A 36-Pin ECONO 3
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
VCEsat-Max 2.15 V
Input Capacitance (Cies) @ Vce 5.3nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn On Time 340 ns
Power Dissipation-Max (Abs) 355W
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Power - Max 355W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X34
Pin Count 34
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 34
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 36
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Alternative Model
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