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FS35R12U1T4BPSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description MOD IGBT LOW PWR SMART1-1
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 2nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 390 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 35A
Turn On Time 32 ns
Current - Collector (Ic) (Max) 70A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 1mA
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 250W
Case Connection ISOLATED
Configuration Full Bridge
Number of Elements 6
JESD-30 Code R-XUFM-X26
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL APPROVED
ECCN Code EAR99
Number of Terminations 26
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2002
Operating Temperature -40°C~150°C

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount

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