FS200R07N3E4RBOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 600V 200A
PDF
/
Buying Options
Total Price: USD $153.13
Unit Price: USD $153.1288
≥1 USD $153.1288
≥10 USD $143.42504
≥100 USD $138.03269
Inventory: 129
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Dimensions
Height 17.5mm
Technical
Input Capacitance (Cies) @ Vce 13nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 450 ns
Continuous Collector Current 200A
Max Junction Temperature (Tj) 150°C
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 200A
Turn On Time 210 ns
Collector Emitter Saturation Voltage 1.55V
Collector Emitter Breakdown Voltage 650V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 650V
Turn-Off Delay Time 340 ns
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Turn On Delay Time 150 ns
Power Dissipation 600W
Configuration Three Phase Inverter
Number of Elements 6
Pin Count 35
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 35
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C
Physical
Manufacturer Package Identifier FS200R07N3E4RBOSA1
Transistor Element Material SILICON
Number of Pins 35
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
Recommended For You
FS200R07N3E4RBOSA1+price,FS200R07N3E4RBOSA1+datasheet,FS200R07N3E4RBOSA1+in stock,buy+FS200R07N3E4RBOSA1,finder+FS200R07N3E4RBOSA1,FS200R07N3E4RBOSA1+tutorials,FS200R07N3E4RBOSA1+download