FS150R17N3E4BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 650V 150A
PDF
/
Buying Options
Total Price: USD $541.44
Unit Price: USD $541.437334
≥1 USD $541.437334
≥200 USD $216.037695
≥500 USD $208.818058
≥1000 USD $205.250909
Inventory: 3177
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
VCEsat-Max 2.3 V
Input Capacitance (Cies) @ Vce 13.5nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 150A
Power Dissipation-Max (Abs) 835W
Current - Collector (Ic) (Max) 150A
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector Cutoff (Max) 1mA
Input Standard
Halogen Free Not Halogen Free
Power - Max 835W
Configuration Three Phase Inverter
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C
Physical
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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