FS150R12KT4BOSA1
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 150A 750W
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Buying Options
Total Price: USD $475.89
Unit Price: USD $475.889489
≥1 USD $475.889489
≥200 USD $184.163109
≥500 USD $177.691825
≥1000 USD $174.4936
Inventory: 1114
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status ROHS3 Compliant
Technical
VCEsat-Max 2.1 V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 605 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 150A
Turn On Time 165 ns
Power Dissipation-Max (Abs) 750W
Current - Collector (Ic) (Max) 150A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 1mA
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Power - Max 750W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X35
Pin Count 35
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 35
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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