FS150R07PE4BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 650V 150A
PDF
/
Buying Options
Total Price: USD $173.95
Unit Price: USD $173.954401
≥1 USD $173.954401
≥10 USD $168.234431
≥25 USD $167.064975
≥50 USD $165.903648
≥100 USD $162.491331
≥500 USD $150.87403
Inventory: 1146
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Dimensions
Width 70.6mm
Length 130mm
Height 17mm
Technical
Input Capacitance (Cies) @ Vce 9.3nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 660 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 150A
Turn On Time 150 ns
Current - Collector (Ic) (Max) 150A
Current - Collector Cutoff (Max) 1mA
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 650V
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X20
Pin Count 20
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 430W
ECCN Code EAR99
Number of Terminations 20
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2002
Packaging Bulk
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case Module
Mounting Type Chassis Mount
Mount PCB
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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