FS150R07N3E4B11BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 650V 150A
PDF
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Buying Options
Total Price: USD $361.96
Unit Price: USD $361.959966
≥1 USD $361.959966
≥200 USD $140.074614
≥500 USD $135.151239
≥1000 USD $132.719748
Inventory: 1159
Minimum: 1
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Technical Details
Physical
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 35
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X35
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 430W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 150A
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 150A
Turn Off Time-Nom (toff) 450 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 9.3nF @ 25V
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
Alternative Model
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