FP75R17N3E4BPSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 600V 75A
PDF
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Buying Options
Total Price: USD $220.31
Unit Price: USD $220.305051
≥1 USD $220.305051
≥10 USD $213.060976
≥25 USD $211.57992
≥50 USD $210.109154
≥100 USD $205.787616
≥500 USD $191.074849
Inventory: 1190
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 6.8nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 800 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
Turn On Time 305 ns
Current - Collector (Ic) (Max) 125A
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector Cutoff (Max) 1mA
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 555W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 7
JESD-30 Code R-XUFM-X35
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL RECOGNIZED
ECCN Code EAR99
Number of Terminations 35
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 52 Weeks
Alternative Model
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