FP75R12KT4B15BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 75A 385W
PDF
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Buying Options
Total Price: USD $147.9
Unit Price: USD $147.9016
≥1 USD $147.9016
≥10 USD $138.53048
≥100 USD $133.32293
Inventory: 28
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 4.3nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 620 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn On Time 210 ns
Collector Emitter Saturation Voltage 2.15V
Current - Collector (Ic) (Max) 75A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 1mA
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Power Dissipation 385W
Configuration Three Phase Inverter
Number of Elements 7
JESD-30 Code R-XUFM-X35
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL RECOGNIZED
ECCN Code EAR99
Number of Terminations 35
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Published 2014
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 34
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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