FP75R12KE3BOSA1
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 105A 355W
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Buying Options
Total Price: USD $148.1
Unit Price: USD $148.104
≥1 USD $148.104
≥10 USD $138.71968
≥100 USD $133.5048
Inventory: 84
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 24
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C TJ
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35
ECCN Code EAR99
Max Power Dissipation 350W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X35
Number of Elements 7
Polarity NPN
Configuration Single
Power Dissipation 350W
Case Connection ISOLATED
Power - Max 355W
Forward Current 75A
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 105A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.15V
Turn On Time 330 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.3nF @ 25V
Dimensions
Height 17mm
Length 122mm
Width 62mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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