FP75R07N2E4B11BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 600V 75A
PDF
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Buying Options
Total Price: USD $133.39
Unit Price: USD $133.38587
≥1 USD $133.38587
≥10 USD $125.835726
≥100 USD $118.712953
≥500 USD $111.993352
≥1000 USD $105.654106
Inventory: 1177
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 4.6nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 320 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 75A
Turn On Time 45 ns
Current - Collector (Ic) (Max) 75A
Current - Collector Cutoff (Max) 1mA
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 650V
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 7
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL APPROVED
ECCN Code EAR99
Number of Terminations 31
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Published 2002
Packaging Bulk
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 31
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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