FP35R12KT4BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 35A
PDF
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Buying Options
Total Price: USD $130.64
Unit Price: USD $130.635649
≥1 USD $130.635649
≥10 USD $123.241177
≥100 USD $116.265257
≥500 USD $109.684211
≥1000 USD $103.475665
Inventory: 1169
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 2nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 620 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 35A
Turn On Time 210 ns
Current - Collector (Ic) (Max) 35A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 1mA
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Power - Max 210W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 7
Qualification Status Not Qualified
Pin Count 23
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 23
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 23
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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