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FP30R07U1E4BPSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 650V 50A 160W
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 1.9nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 274 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn On Time 40 ns
Collector Emitter Saturation Voltage 1.6V
Current - Collector (Ic) (Max) 50A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Voltage (VCEO) 650V
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 160W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 7
JESD-30 Code R-XUFM-X23
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 160W
Additional Feature UL APPROVED
ECCN Code EAR99
Number of Terminations 23
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Published 2012
Operating Temperature -40°C~150°C

Physical

Transistor Element Material SILICON
Number of Pins 1
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount

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