FP30R06W1E3BOMA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 37A 115W
PDF
/
Buying Options
Total Price: USD $36.21
Unit Price: USD $36.212
≥1 USD $36.212
≥10 USD $32.26557
≥100 USD $30.343685
≥500 USD $28.320688
≥1000 USD $27.30926
Inventory: 130
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Input Capacitance (Cies) @ Vce 1.65nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 245 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn On Time 42 ns
Collector Emitter Saturation Voltage 1.55V
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 37A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 115W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 7
Pin Count 23
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 115W
ECCN Code EAR99
Number of Terminations 23
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 23
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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