FP25R12W2T4BOMA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 40A
PDF
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Buying Options
Total Price: USD $43.67
Unit Price: USD $43.6744
≥1 USD $43.6744
Inventory: 120
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 23
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 35
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X35
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 175W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 39A
Turn On Time 133 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 25A
Turn Off Time-Nom (toff) 685 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 1.45nF @ 25V
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
Alternative Model
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