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FP25R12KS4CBOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 1200V 40A
PDF
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Buying Options
Total Price: USD $283.31
Unit Price: USD $283.310691
≥1 USD $283.310691
≥200 USD $113.043316
≥500 USD $109.266103
≥1000 USD $107.399159
Inventory: 1117
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status RoHS Compliant

Dimensions

Width 45mm
Length 107.5mm
Height 17mm

Technical

Input Capacitance (Cies) @ Vce 1.5nF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 460 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 25A
Turn On Time 110 ns
Collector Emitter Saturation Voltage 3.2V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Case Connection ISOLATED
Power Dissipation 230W
Configuration Single
Number of Elements 7
Qualification Status Not Qualified
Pin Count 24
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 230W
ECCN Code EAR99
Number of Terminations 24
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code no
Published 2001
Operating Temperature -40°C~125°C

Physical

Transistor Element Material SILICON
Number of Pins 24
Package / Case Module
Mounting Type Chassis Mount
Mount PCB, Screw

Supply Chain

Factory Lead Time 14 Weeks

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