FP15R12W1T4BOMA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 28A 130W
PDF
/
Buying Options
Total Price: USD $23.36
Unit Price: USD $23.355671
≥1 USD $23.355671
≥10 USD $22.033649
≥100 USD $20.786473
≥500 USD $19.609875
≥1000 USD $18.499881
Inventory: 1192
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Input Capacitance (Cies) @ Vce 890pF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 495 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 15A
Turn On Time 120 ns
Collector Emitter Saturation Voltage 1.85V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 28A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 130W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 7
Qualification Status Not Qualified
Pin Count 23
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 130W
ECCN Code EAR99
Number of Terminations 23
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 23
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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