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FP15R12W1T4B11BOMA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 1200V 28A 130000mW 23-Pin EASY1B-2 Tray
PDF
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Buying Options
Total Price: USD $40.87
Unit Price: USD $40.8672
≥1 USD $40.8672
≥10 USD $36.41917
≥100 USD $34.24997
≥500 USD $31.966554
≥1000 USD $30.82493
Inventory: 51
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X23
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 130W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 28A
Turn On Time 120 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 15A
Turn Off Time-Nom (toff) 495 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 890pF @ 25V

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

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