FP10R12W1T4B11BOMA1
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1200V 20A 105000mW 23-Pin EASY1B-2 Tray
PDF
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Buying Options
Total Price: USD $71.61
Unit Price: USD $71.606879
≥1 USD $71.606879
≥200 USD $27.71138
≥500 USD $26.737209
≥1000 USD $26.256687
Inventory: 1140
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Input Capacitance (Cies) @ Vce 600pF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 500 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 10A
Turn On Time 108 ns
Current - Collector (Ic) (Max) 20A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Collector Emitter Voltage (VCEO) 1.85V
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 7
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 105W
ECCN Code EAR99
Number of Terminations 23
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 23
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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