FP10R06W1E3BOMA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 600V 100A
PDF
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Buying Options
Total Price: USD $32.25
Unit Price: USD $32.252
≥1 USD $32.252
≥10 USD $28.7353
≥100 USD $27.023885
≥500 USD $25.222358
≥1000 USD $24.321554
Inventory: 53
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Input Capacitance (Cies) @ Vce 550pF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 260 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
Turn On Time 26 ns
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 16A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Case Connection ISOLATED
Power Dissipation 68W
Configuration Three Phase Inverter
Number of Elements 7
Qualification Status Not Qualified
Pin Count 23
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 68W
ECCN Code EAR99
Number of Terminations 23
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 23
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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