FP100R07N3E4B11BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 600V 100A
PDF
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Buying Options
Total Price: USD $137.84
Unit Price: USD $137.8432
≥1 USD $137.8432
≥10 USD $129.1092
≥100 USD $124.25571
Inventory: 59
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 6.2nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 100A
Turn On Time 100 ns
Current - Collector (Ic) (Max) 100A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Voltage (VCEO) 650V
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 335W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 7
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 43
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 43
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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