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FF900R12IP4DVBOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 1200V 900A
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status Non-RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 54nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 1300 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 900A
Turn On Time 370 ns
Current - Collector (Ic) (Max) 900A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application GENERAL PURPOSE
Power - Max 5100W
Case Connection ISOLATED
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
JESD-30 Code R-PUFM-X10
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series PrimePack?2
Published 2002
Operating Temperature -40°C~150°C

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount

Supply Chain

Factory Lead Time 50 Weeks

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