FF900R12IP4DBOSA2
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 900A
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Technical Details
Supply Chain
Factory Lead Time 50 Weeks
Physical
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 10
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Published 2002
Series PrimePack?2
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Max Power Dissipation 5.1kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 5100W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 900A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 370 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 900A
Turn Off Time-Nom (toff) 1300 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead
Alternative Model
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