FF900R12IE4BOSA1
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 900A 5100W
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Buying Options
Total Price: USD $413.69
Unit Price: USD $413.688
≥1 USD $413.688
≥10 USD $398.13693
Inventory: 43
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Dimensions
Width 89mm
Length 172mm
Height 38mm
Technical
Input Capacitance (Cies) @ Vce 54nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 940 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 900A
Turn On Time 350 ns
Collector Emitter Saturation Voltage 2.05V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 900A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 5100W
Case Connection ISOLATED
Power Dissipation 5.1kW
Element Configuration Dual
Configuration Single
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X7
Pin Count 11
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 5.1kW
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Series PrimePack?2
Published 2002
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 10
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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