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FF800R17KE3NOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 1200V 800A
PDF
/
Buying Options
Total Price: USD $1931.18
Unit Price: USD $1931.183997
≥1 USD $1931.183997
≥200 USD $770.555452
≥500 USD $744.806857
≥1000 USD $732.083543
Inventory: 1420
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status Non-RoHS Compliant

Dimensions

Width 130mm
Length 140mm
Height 38mm

Technical

Input Capacitance (Cies) @ Vce 72nF @ 25V
NTC Thermistor No
Turn Off Time-Nom (toff) 1900 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 800A
Turn On Time 900 ns
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector Cutoff (Max) 5mA
Max Collector Current 1.15kA
Collector Emitter Voltage (VCEO) 1.7kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Power - Max 4450W
Case Connection ISOLATED
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
JESD-30 Code R-XUFM-X10
Pin Count 10
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 10
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Not For New Designs
Pbfree Code no
Published 2002
Operating Temperature -40°C~125°C

Physical

Transistor Element Material SILICON
Number of Pins 130
Package / Case Module
Mounting Type Chassis Mount
Mount Screw

Supply Chain

Factory Lead Time 36 Weeks

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