FF800R12KF4
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 800A 10-pin IHM130-2
PDF
/
Inventory: 5931
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 3.2 V
Input Capacitance (Cies) @ Vce 55nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
Turn Off Time-Nom (toff) 1150 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 800A
Turn On Time 800 ns
Collector Emitter Saturation Voltage 2.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 16mA
Max Collector Current 800A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Power - Max 5000W
Case Connection ISOLATED
Power Dissipation 5kW
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
Pin Count 10
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2012
Operating Temperature -40°C~125°C
Physical
Transistor Element Material SILICON
Number of Pins 10
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 36 Weeks
Alternative Model
Recommended For You
FF800R12KF4+price,FF800R12KF4+datasheet,FF800R12KF4+in stock,buy+FF800R12KF4,finder+FF800R12KF4,FF800R12KF4+tutorials,FF800R12KF4+download