FF75R12YT3BOMA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 75A
PDF
/
Buying Options
Total Price: USD $408.38
Unit Price: USD $408.384251
≥1 USD $408.384251
≥10 USD $394.955748
≥25 USD $392.210282
≥50 USD $389.483893
≥100 USD $381.472962
≥500 USD $354.199599
Inventory: 8962
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Dimensions
Width 45.6mm
Length 55.9mm
Height 17mm
Technical
Input Capacitance (Cies) @ Vce 5nF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 710 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
Turn On Time 108 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 345W
Case Connection ISOLATED
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X9
Pin Count 24
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 9
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code no
Published 2002
Operating Temperature -40°C~125°C
Physical
Transistor Element Material SILICON
Number of Pins 2
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Alternative Model
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