FF650R17IE4VBOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1700V 4150W
PDF
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Buying Options
Total Price: USD $1180.88
Unit Price: USD $1180.880028
≥1 USD $1180.880028
≥201 USD $471.178804
≥501 USD $455.434507
≥999 USD $447.654261
Inventory: 8916
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 50 Weeks
Physical
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X10
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 4150W
Transistor Application GENERAL PURPOSE
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 720 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
Turn Off Time-Nom (toff) 1870 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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