FF650R17IE4DPB2BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1700V 650A
PDF
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Buying Options
Total Price: USD $503.89
Unit Price: USD $503.888
≥1 USD $503.888
≥10 USD $484.94087
Inventory: 92
Minimum: 1
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Technical Details
Physical
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 10
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X10
Number of Elements 2
Configuration 2 Independent
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 650A
Turn On Time 765 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
Turn Off Time-Nom (toff) 1870 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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