FF600R12ME4CB11BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 1060A 11-pin ECONOD-3
PDF
/
Inventory: 4867
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Physical
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 11
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Published 2002
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 4050W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 1.06kA
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1060A
Power Dissipation-Max (Abs) 4050W
Turn On Time 300 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A
Turn Off Time-Nom (toff) 710 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 37nF @ 25V
VCEsat-Max 2.1 V
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
Alternative Model
Recommended For You
FF600R12ME4CB11BOSA1+price,FF600R12ME4CB11BOSA1+datasheet,FF600R12ME4CB11BOSA1+in stock,buy+FF600R12ME4CB11BOSA1,finder+FF600R12ME4CB11BOSA1,FF600R12ME4CB11BOSA1+tutorials,FF600R12ME4CB11BOSA1+download