FF600R12ME4BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 600V 600A
PDF
/
Buying Options
Total Price: USD $240.65
Unit Price: USD $240.6536
≥1 USD $240.6536
≥10 USD $225.4032
≥100 USD $216.92968
Inventory: 87
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 37nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 770 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A
Turn On Time 310 ns
Collector Emitter Saturation Voltage 2.1V
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 3mA
Max Collector Current 600A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 4050W
Case Connection ISOLATED
Power Dissipation 4.05kW
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X7
Pin Count 11
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 11
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 52 Weeks
Alternative Model
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