FF600R12ME4B72BOSA1
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 1200A 20MW
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Buying Options
Total Price: USD $205.05
Unit Price: USD $205.0488
≥1 USD $205.0488
≥10 USD $192.05648
≥100 USD $184.83637
Inventory: 53
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 37nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 770 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A
Turn On Time 310 ns
Current - Collector (Ic) (Max) 1200A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 3mA
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 20mW
Case Connection ISOLATED
Configuration Half Bridge
Number of Elements 2
JESD-30 Code R-XUFM-X7
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 36 Weeks
Alternative Model
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